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| Freescale Semiconductor Technical Data Document Number: MRF281 Rev. 5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications. * Specified Two - Tone Performance @ 1930 and 2000 MHz, 26 Volts Output Power -- 4 Watts PEP Power Gain -- 11 dB Efficiency -- 30% Intermodulation Distortion -- - 29 dBc * Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 4 Watts CW Output Power Features * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * S - Parameter Characterization at High Bias Levels * RoHS Compliant * Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. MRF281SR1 MRF281ZR1 2000 MHz, 4 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 458B - 03, STYLE 1 NI - 200S MRF281SR1 CASE 458C - 03, STYLE 1 NI - 200Z MRF281ZR1 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 20 20 0.115 - 65 to +150 150 200 Unit Vdc Vdc W W/C C C C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 5.74 Unit C/W Table 3. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Off Characteristics Drain - Source Breakdown Voltage (VGS = 0, ID = 10 Adc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) Gate - Source Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 65 -- -- 74 -- -- -- 10 1 Vdc Adc Adc Symbol Min Typ Max Unit NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. (c) Freescale Semiconductor, Inc., 2006. All rights reserved. MRF281SR1 MRF281ZR1 1 RF Device Data Freescale Semiconductor Table 3. Electrical Characteristics (TC = 25C unless otherwise noted) (continued) Characteristic On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 20 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 25 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 0.1 A) Dynamic Characteristics Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Functional Tests (In Freescale Test Fixture) Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 4 W, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA, f1 = 2000.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA, f1 = 2000.0 MHz) Gps 11 12.5 -- dB Ciss Coss Crss -- -- -- 5.5 3.3 0.17 -- -- -- pF pF pF VGS(th) VGS(q) VDS(on) 2.4 3 0.18 3.2 4.1 0.24 4 5 0.30 Vdc Vdc Vdc Symbol Min Typ Max Unit 30 33 -- % IRL -- - 16 - 10 dB IMD -- - 31 - 29 dBc Gps 11 12.5 -- dB 30 -- -- % IRL -- - 16 - 10 dB IMD -- - 31 -- dBc Gps 10.5 12 -- dB 40 44 -- % MRF281SR1 MRF281ZR1 2 RF Device Data Freescale Semiconductor Zo = 25 f = 2000 MHz Zin f = 2000 MHz f = 1500 MHz ZOL* f = 1500 MHz VDD = 26 V, IDQ = 25 mA, Pout = 4 W (PEP) f MHz 1500 1600 1700 1800 1900 2000 Zin Zin 3.15 - j5.3 3.1 - j3.8 3.1 - j2.3 3.1 - j0.7 3.1 + j0.9 3.1 + j2.4 ZOL* 15.5 - j13.6 14.7 - j12.5 14.0 - j11.7 13.4 - j11.0 12.8 - j10.1 12.2 - j9.2 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at given output power, voltage, IMD, bias current and frequency. Input Matching Network Device Under Test Output Matching Network Z in Z * OL Figure 1. Series Equivalent Input and Output Impedance MRF281SR1 MRF281ZR1 RF Device Data Freescale Semiconductor 3 Table 4. Common Source S - Parameters at VDS = 26 Vdc, ID = 250 mAdc f GHz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 S11 |S11| .982 .947 .912 .886 .859 .854 .841 .837 .838 .841 .840 .849 .848 .856 .858 .871 .868 .870 .872 .877 .876 .880 .882 .886 .896 .897 f -28 -52 -73 -90 -103 -114 -123 -131 -138 -143 -149 -153 -158 -162 -167 -170 -173 -176 -180 178 174 171 168 165 162 158 dB 18.9 17.0 15.0 12.9 11.1 9.69 8.54 7.57 6.69 6.01 5.41 4.91 4.51 4.12 3.78 3.50 3.22 3.00 2.80 2.63 2.47 2.36 2.21 2.12 1.97 1.89 S21 f 160 143 129 117 108 100 93 87 81 76 72 68 64 60 57 54 51 49 46 44 41 39 36 34 32 29 |S12| .008 .015 .019 .022 .022 .023 .022 .021 .019 .018 .015 .013 .012 .010 .009 .008 .009 .009 .011 .013 .015 .018 .021 .024 .027 .029 S12 f 73 58 45 36 28 23 18 15 12 11 12 13 18 26 36 54 69 82 95 104 109 111 114 114 115 117 |S22| .851 .811 .770 .741 .719 .718 .709 .714 .719 .728 .742 .745 .758 .769 .786 .797 .808 .823 .828 .845 .843 .859 .858 .872 .863 .873 S22 f -13 -25 -33 -42 -47 -51 -56 -59 -62 -64 -66 -68 -69 -70 -70 -72 -71 -72 -72 -72 -72 -71 -72 -70 -70 -69 MRF281SR1 MRF281ZR1 4 RF Device Data Freescale Semiconductor NOTES MRF281SR1 MRF281ZR1 RF Device Data Freescale Semiconductor 5 NOTES MRF281SR1 MRF281ZR1 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS ccc M TA M 1 M B M NOTES: 1. CONTROLLING DIMENSIONS: INCHES. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. ALL DIMENSIONS ARE SYMMETRICAL ABOUT CENTERLINE UNLESS OTHERWISE NOTED. INCHES MIN MAX 0.180 0.190 0.140 0.150 0.082 0.116 0.047 0.053 0.004 0.010 0.004 0.006 0.025 0.031 0.060 0.110 0.197 0.203 0.177 0.183 0.147 0.153 0.157 0.163 --- 0.020 0.010 REF 0.015 REF MILLIMETERS MIN MAX 4.572 4.83 3.556 3.81 2.083 2.946 1.194 1.346 0.102 0.254 0.102 0.152 0.635 0.787 1.524 2.794 5.004 5.156 4.496 4.648 3.734 3.886 3.988 4.14 --- 0.508 0.254 REF 0.381 REF (INSULATOR) R (LID) ccc M TA M B M 4X Z DIM A B C D E F H K M N R S Z bbb ccc 2X K S (INSULATOR) ccc M T A B 2 2X M B M D bbb M M 3 TA B M M B M (FLANGE) B ccc M TA (LID) N E STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE F C H A (FLANGE) A T SEATING PLANE CASE 458B - 03 ISSUE D NI - 200S MRF281SR1 ccc M TA M M B M F R (LID) (INSULATOR) 4X Y Z 1 ccc M TA M B M 3 NOTES: 1. CONTROLLING DIMENSIONS: INCHES. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H (PACKAGE COPLANARITY): THE BOTTOM OF LEADS AND REFERENCE PLANE T MUST BE COPLANAR WITHIN DIMENSION H. INCHES MIN MAX 0.180 0.190 0.140 0.150 0.082 0.116 0.047 0.053 0.004 0.010 0.004 0.006 0.000 0.004 0.050 0.090 0.197 0.203 0.177 0.183 0.147 0.153 0.157 0.163 0.020 0.040 --- R .020 .010 REF .015 REF MILLIMETERS MIN MAX 4.572 4.830 3.556 3.810 2.083 2.946 1.194 1.346 0.102 0.254 0.102 0.152 0.000 0.102 1.270 2.286 5.004 5.156 4.496 4.648 3.734 3.886 3.988 4.140 0.508 1.016 --- R .508 0.254 REF 0.381 REF S (INSULATOR) ccc M TA M B (FLANGE) M B 2 2X B 2X D M K bbb TA M B M ccc M TA (LID) M B M N DIM A B C D E F H K M N R S Y Z bbb ccc H C E STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE A (FLANGE) A T SEATING PLANE CASE 458C - 03 ISSUE D NI - 200Z MRF281ZR1 MRF281SR1 MRF281ZR1 RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com RoHS-compliant and/or Pb- free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale.s Environmental Products program, go to http://www.freescale.com/epp. Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2006. All rights reserved. MRF281SR1 MRF281ZR1 8Rev. 5, 5/2006 Document Number: MRF281 RF Device Data Freescale Semiconductor |
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